All MOSFET. AP6677GH Datasheet

 

AP6677GH Datasheet and Replacement


   Type Designator: AP6677GH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm
   Package: TO252
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AP6677GH Datasheet (PDF)

 ..1. Size:148K  ape
ap6677gh.pdf pdf_icon

AP6677GH

AP6677GHRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.3m Fast Switching Characteristic ID -60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO-252(H)Sruggedized device des

 9.1. Size:60K  ape
ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6677GH

AP6679GS/P-APb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-

 9.2. Size:198K  ape
ap6679gs.pdf pdf_icon

AP6677GH

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi

 9.3. Size:153K  ape
ap6679gi-hf.pdf pdf_icon

AP6677GH

AP6679GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-220CFM(I)ruggedized dev

Datasheet: AP60T06GJ-HF , AP60T06GP-HF , AP60T10GI-HF , AP60T10GP , AP60T10GS , AP62T03GH , AP62T03GJ , AP6618GM-HF , RFP50N06 , AP6679BGH-HF , AP6679BGI-HF , AP6679BGM-HF , AP6679BGP-HF , AP6679GH-HF , AP6679GI-HF , AP6679GJ-HF , AP6679GM-HF .

History: SRT10N090L | FDB52N20 | UTT24N06G-TN3-R | RU35122R | FDB9403-F085 | HUF76137S3S | AUIRF7736M2TR

Keywords - AP6677GH MOSFET datasheet

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