AP6677GH Specs and Replacement

Type Designator: AP6677GH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm

Package: TO252

AP6677GH substitution

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AP6677GH datasheet

 ..1. Size:148K  ape
ap6677gh.pdf pdf_icon

AP6677GH

AP6677GH RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.3m Fast Switching Characteristic ID -60A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, TO-252(H) S ruggedized device des... See More ⇒

 9.1. Size:60K  ape
ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6677GH

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-... See More ⇒

 9.2. Size:198K  ape
ap6679gs.pdf pdf_icon

AP6677GH

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi... See More ⇒

 9.3. Size:153K  ape
ap6679gi-hf.pdf pdf_icon

AP6677GH

AP6679GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-220CFM(I) ruggedized dev... See More ⇒

Detailed specifications: AP60T06GJ-HF, AP60T06GP-HF, AP60T10GI-HF, AP60T10GP, AP60T10GS, AP62T03GH, AP62T03GJ, AP6618GM-HF, K4145, AP6679BGH-HF, AP6679BGI-HF, AP6679BGM-HF, AP6679BGP-HF, AP6679GH-HF, AP6679GI-HF, AP6679GJ-HF, AP6679GM-HF

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