AP6677GH. Аналоги и основные параметры
Наименование производителя: AP6677GH
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 69 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 560 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0123 Ohm
Тип корпуса: TO252
Аналог (замена) для AP6677GH
- подборⓘ MOSFET транзистора по параметрам
AP6677GH даташит
..1. Size:148K ape
ap6677gh.pdf 

AP6677GH RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.3m Fast Switching Characteristic ID -60A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, TO-252(H) S ruggedized device des
9.1. Size:60K ape
ap6679gp-a ap6679gs-a.pdf 

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-
9.2. Size:198K ape
ap6679gs.pdf 

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi
9.3. Size:153K ape
ap6679gi-hf.pdf 

AP6679GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-220CFM(I) ruggedized dev
9.4. Size:201K ape
ap6679gp.pdf 

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi
9.5. Size:95K ape
ap6679bgm-hf.pdf 

AP6679BGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance D RDS(ON) 9m D Fast Switching Characteristic ID -13.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o
9.6. Size:200K ape
ap6679bmt.pdf 

AP6679BMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Low On-resistance RDS(ON) 9m Simple Drive Requirement ID -60A G RoHS Compliant & Halogen-Free S D Description D D AP6679B series are from Advanced Power innovated design and D silicon process technology to achieve the lowest p
9.7. Size:95K ape
ap6679bgi-hf.pdf 

AP6679BGI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz
9.8. Size:215K ape
ap6679gh ap6679gj.pdf 

AP6679GH/J RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl
9.9. Size:125K ape
ap6679gm-hf.pdf 

AP6679GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 9m D Fast Switching Characteristic ID -14A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru
9.10. Size:95K ape
ap6679bgp-hf.pdf 

AP6679BGP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rugg
9.11. Size:98K ape
ap6679bgh-hf ap6679bgj-hf.pdf 

AP6679BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,
9.12. Size:134K ape
ap6679bgjb.pdf 

AP6679BGJB-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest
9.13. Size:150K ape
ap6679gi.pdf 

AP6679GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D TO-220CFM(I) S ruggedized device design, low on-r
9.14. Size:216K ape
ap6679gh-hf ap6679gj-hf.pdf 

AP6679GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suit
9.15. Size:97K ape
ap6679gp-hf ap6679gs-hf.pdf 

AP6679GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) r
9.16. Size:166K ape
ap6679bgj.pdf 

AP6679BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon G D process technology to achieve th
9.17. Size:62K ape
ap6679gs p-a-hf.pdf 

AP6679GS/P-A-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
9.18. Size:179K ape
ap6679bgm.pdf 

AP6679BGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Lower On-resistance RDS(ON) 9m D Fast Switching Characteristic ID -13.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP6679B series are from Advanced Power innovated design and silicon process tech
9.19. Size:201K ape
ap6679bgh.pdf 

AP6679BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon G D process technology to achieve th
9.20. Size:159K ape
ap6679bgp.pdf 

AP6679BGP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest
9.21. Size:149K ape
ap6679gr.pdf 

AP6679GR RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
9.22. Size:411K cn vbsemi
ap6679gh.pdf 

AP6679GH www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive2002/95/EC RDS(on) ( ) VDS (V) ID (A)a Available -60 0.009 at VGS = - 10 V RoHS* - 30 COMPLIANT -58 0.012 at VGS = - 4.5 V S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VG
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