AP6800GEO Todos los transistores

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AP6800GEO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6800GEO

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 18.4 nS

Conductancia de drenaje-sustrato (Cd): 315 pF

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Empaquetado / Estuche: TSSOP-8

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AP6800GEO Datasheet (PDF)

1.1. ap6800geo.pdf Size:107K _a-power

AP6800GEO
AP6800GEO

AP6800GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 ЎLow on-resistance BVDSS 20V Ў Ў Ў S2 S2 D2 ЎCapable of 2.5V gate drive RDS(ON) 20m? Ў Ў Ў G1 S1 ЎOptimal DC/DC battery application S1 ID 6 Ў Ў Ў TSSOP-8 D1 Ў RoHS compliant Ў Ў Ў Description D1 D2 The Advanced Power MOSFETs from APEC pro

4.1. ap6800ey.pdf Size:165K _a-power

AP6800GEO
AP6800GEO

AP6800EY Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET S2 ▼ Simple Drive Requirement BVDSS 60V G2 D1 ▼ Smaller Outline Package RDS(ON) 2Ω D2 ▼ Surface mount package ID3 260mA G1 SOT-26 S1 ▼ RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 AP6800 series are from Advanced Power innovated design and silicon proce

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Introduzca al menos 1 números o letras