All MOSFET. AP6800GEO Datasheet

 

AP6800GEO Datasheet and Replacement


   Type Designator: AP6800GEO
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.4 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8
 

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AP6800GEO Datasheet (PDF)

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AP6800GEO

AP6800GEOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 20m G1S1Optimal DC/DC battery application S1 ID 6 TSSOP-8D1 RoHS compliantDescriptionD1 D2The Advanced Power M

 8.1. Size:165K  ape
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AP6800GEO

AP6800EYHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETS2 Simple Drive Requirement BVDSS 60VG2D1 Smaller Outline Package RDS(ON) 2D2 Surface mount package ID3 260mAG1SOT-26S1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2AP6800 series are from Advanced Power innovated design andsilicon proce

Datasheet: 2SK727-01 , 2SK787 , AP6680AGM , AP6680BGM-HF , AP6680BGYT-HF , AP6680CGYT-HF , AP6680SGYT-HF , AP6683GYT-HF , IRFB31N20D , AP6900GSM , AP6901AGSM-HF , AP6901GSM-HF , 2SK800 , 2SK805 , 2SK806 , 2SK808 , 2SK808A .

History: IRF7822PBF | P2610BT | DMN3035LWN | AM4481P | 2SK1483C | IPB34CN10N | FQD2N50TF

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