AP6800GEO MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

AP6800GEO Specs and Replacement

Type Designator: AP6800GEO

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.4 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TSSOP-8

AP6800GEO substitution

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AP6800GEO datasheet

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AP6800GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 20m G1 S1 Optimal DC/DC battery application S1 ID 6 TSSOP-8 D1 RoHS compliant Description D1 D2 The Advanced Power M... See More ⇒

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AP6800EY Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET S2 Simple Drive Requirement BVDSS 60V G2 D1 Smaller Outline Package RDS(ON) 2 D2 Surface mount package ID3 260mA G1 SOT-26 S1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 AP6800 series are from Advanced Power innovated design and silicon proce... See More ⇒

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