AP75T10AGP Todos los transistores

 

AP75T10AGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP75T10AGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 138 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 105 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

AP75T10AGP Datasheet (PDF)

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AP75T10AGP

AP75T10AGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 105V Low On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resist

 7.1. Size:162K  ape
ap75t10gi.pdf pdf_icon

AP75T10AGP

AP75T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42AGSDescriptionAP75T10 series are from Advanced Power innovated design andsilicon process technology to achie

 7.2. Size:152K  ape
ap75t10bgp.pdf pdf_icon

AP75T10AGP

AP75T10BGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 12m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP75T10B series are from Advanced Power innovat

 7.3. Size:225K  ape
ap75t10gs.pdf pdf_icon

AP75T10AGP

AP75T10GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design, lowDSo

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History: SMS318 | DMN2170U | AM5350N | CS6N90FA9H | STM4886E | SSM6N43FU | RUH1H139S

 

 
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