AP75T10AGP MOSFET. Datasheet pdf. Equivalent
Type Designator: AP75T10AGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 138 W
Maximum Drain-Source Voltage |Vds|: 105 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 65 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 63 nC
Rise Time (tr): 74 nS
Drain-Source Capacitance (Cd): 550 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO-220
AP75T10AGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP75T10AGP Datasheet (PDF)
1.1. ap75t10agp.pdf 
Size:150K _a-power
AP75T10AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 105V Ў Low On-resistance RDS(ON) 15m? Ў Fast Switching Characteristic ID 65A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
3.1. ap75t10bgp-hf.pdf Size:95K _a-power
AP75T10BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Low On-resistance RDS(ON) 12m? Ў Fast Switching Characteristic ID 75A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized de
3.2. ap75t10bgp.pdf Size:152K _a-power
AP75T10BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 100V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 12mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID 75A ▼ ▼ ▼ G ▼ RoHS Compliant & Halogen-Free ▼ ▼ ▼ S Description AP75T10B series are from Advanced Power innovat
3.3. ap75t10gp.pdf Size:200K _a-power
AP75T10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 100V ▼ Lower On-resistance RDS(ON) 15mΩ ▼ Fast Switching Characteristic ID 65A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge
3.4. ap75t10gi-hf.pdf Size:57K _a-power
AP75T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower On-resistance RDS(ON) 12m? Ў RoHS Compliant & Halogen-Free ID 42A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resistance
3.5. ap75t10gp-hf.pdf Size:160K _a-power
AP75T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 100V Ў Lower On-resistance RDS(ON) 15m? Ў Fast Switching Characteristic ID 65A G Ў RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low
3.6. ap75t10gi.pdf Size:162K _a-power
AP75T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 100V ▼ ▼ ▼ ▼ Lower On-resistance RDS(ON) 12mΩ ▼ ▼ ▼ ▼ RoHS Compliant & Halogen-Free ID 42A ▼ ▼ ▼ G S Description AP75T10 series are from Advanced Power innovated design and silicon process technology to achie
3.7. ap75t10gs-hf ap75t10gp-hf.pdf Size:96K _a-power
AP75T10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 100V ▼ Lower On-resistance RDS(ON) 15mΩ ▼ Fast Switching Characteristic ID 65A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge
3.8. ap75t10gs.pdf Size:225K _a-power
AP75T10GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 100V Ў Lower On-resistance RDS(ON) 15m? Ў Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D S on-resis
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