AP75T10AGP. Аналоги и основные параметры

Наименование производителя: AP75T10AGP

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 138 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 105 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 74 ns

Cossⓘ - Выходная емкость: 550 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm

Тип корпуса: TO-220

Аналог (замена) для AP75T10AGP

- подборⓘ MOSFET транзистора по параметрам

 

AP75T10AGP даташит

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 ap75t10agp.pdf pdf_icon

AP75T10AGP

AP75T10AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 105V Low On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resist

 7.1. Size:162K  ape
 ap75t10gi.pdf pdf_icon

AP75T10AGP

AP75T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 12m RoHS Compliant & Halogen-Free ID 42A G S Description AP75T10 series are from Advanced Power innovated design and silicon process technology to achie

 7.2. Size:152K  ape
 ap75t10bgp.pdf pdf_icon

AP75T10AGP

AP75T10BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Low On-resistance RDS(ON) 12m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP75T10B series are from Advanced Power innovat

 7.3. Size:225K  ape
 ap75t10gs.pdf pdf_icon

AP75T10AGP

AP75T10GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower On-resistance RDS(ON) 15m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D S o

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