AP86T02GJ-HF Todos los transistores

 

AP86T02GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP86T02GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO-251
 

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AP86T02GJ-HF Datasheet (PDF)

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AP86T02GJ-HF

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low

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 ap86t02gjb.pdf pdf_icon

AP86T02GJ-HF

AP86T02GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP86T02 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss

 6.1. Size:264K  ape
 ap86t02gh j-hf.pdf pdf_icon

AP86T02GJ-HF

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGDSTO-252(H)The TO-252 package is widely preferred for commercial-industrialsurface mount applications and suited

 6.2. Size:235K  ape
 ap86t02gh.pdf pdf_icon

AP86T02GJ-HF

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low

MOSTRAR MÁS

Otros transistores... AP85T10AGI-HF , AP85T10AGP-HF , AP85T10GP-HF , AP85U03GH-HF , AP85U03GM-HF , AP85U03GMT-HF , AP85U03GP-HF , AP86T02GH-HF , IRFZ48N , AP86T03GH , AP86T03GJ , AP88N30W , AP90T03GH , AP90T03GI , AP90T03GJ , AP90T03GR , AP90T03GS-HF .

History: VBE165R02 | IRFS550A | JCS7N60C

 

 
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