AP86T02GJ-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP86T02GJ-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 105 ns
Cossⓘ - Выходная емкость: 490 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO-251
Аналог (замена) для AP86T02GJ-HF
AP86T02GJ-HF Datasheet (PDF)
ap86t02gj.pdf

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low
ap86t02gjb.pdf

AP86T02GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP86T02 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss
ap86t02gh j-hf.pdf

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGDSTO-252(H)The TO-252 package is widely preferred for commercial-industrialsurface mount applications and suited
ap86t02gh.pdf

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low
Другие MOSFET... AP85T10AGI-HF , AP85T10AGP-HF , AP85T10GP-HF , AP85U03GH-HF , AP85U03GM-HF , AP85U03GMT-HF , AP85U03GP-HF , AP86T02GH-HF , IRFZ48N , AP86T03GH , AP86T03GJ , AP88N30W , AP90T03GH , AP90T03GI , AP90T03GJ , AP90T03GR , AP90T03GS-HF .
History: STP10NK70ZFP | AOC2414 | 40N06 | FTK7N65F | AOB266L | PZD502CYB | HUFA76429P3
History: STP10NK70ZFP | AOC2414 | 40N06 | FTK7N65F | AOB266L | PZD502CYB | HUFA76429P3



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