AP86T02GJ-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP86T02GJ-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 105
nS
Cossⓘ -
Output Capacitance: 490
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
TO-251
AP86T02GJ-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP86T02GJ-HF
Datasheet (PDF)
5.1. Size:186K ape
ap86t02gj.pdf
AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low
5.2. Size:173K ape
ap86t02gjb.pdf
AP86T02GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP86T02 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss
6.1. Size:264K ape
ap86t02gh j-hf.pdf
AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGDSTO-252(H)The TO-252 package is widely preferred for commercial-industrialsurface mount applications and suited
6.2. Size:235K ape
ap86t02gh.pdf
AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low
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