AP9412AGI Todos los transistores

 

AP9412AGI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9412AGI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 68 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 435 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO-220CFM
 

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AP9412AGI Datasheet (PDF)

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 ap9412agi.pdf pdf_icon

AP9412AGI

AP9412AGIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance

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 ap9412agm-hf.pdf pdf_icon

AP9412AGI

AP9412AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Ultra_Low On-resistance RDS(ON) 6mDD Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-Free SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination o

 6.2. Size:61K  ape
 ap9412agp.pdf pdf_icon

AP9412AGI

AP9412AGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance an

 6.3. Size:165K  ape
 ap9412agh.pdf pdf_icon

AP9412AGI

AP9412AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with GDSthe best combination of fast switching, ruggedized device design,TO-252(H

MOSTRAR MÁS

Otros transistores... AP9408GJ , AP9408GM-HF , AP9410AGH-HF , AP9410AGM-HF , AP9410GH-HF , AP9410GM , AP9410GMT-HF , AP9412AGH , 2N7000 , AP9412AGM-HF , AP9412AGP , AP9412BGM-HF , AP9412CGM-HF , AP9412GH , AP9412GI , AP9412GJ , AP9412GP .

History: AOT42S60 | STW19NM65N | UPA2815T1S | SDF50NA20GBF | GSM2308A | AP15P10GJ-HF | AOT502

 

 
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