AP9412AGI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9412AGI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 68 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 435 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO-220CFM

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AP9412AGI datasheet

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 ap9412agi.pdf pdf_icon

AP9412AGI

AP9412AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

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 ap9412agm-hf.pdf pdf_icon

AP9412AGI

AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o

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 ap9412agp.pdf pdf_icon

AP9412AGI

AP9412AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an

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 ap9412agh.pdf pdf_icon

AP9412AGI

AP9412AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, TO-252(H

MOSTRAR MÁS

Otros transistores... AP9408GJ, AP9408GM-HF, AP9410AGH-HF, AP9410AGM-HF, AP9410GH-HF, AP9410GM, AP9410GMT-HF, AP9412AGH, AON7408, AP9412AGM-HF, AP9412AGP, AP9412BGM-HF, AP9412CGM-HF, AP9412GH, AP9412GI, AP9412GJ, AP9412GP