AP9412AGI Specs and Replacement

Type Designator: AP9412AGI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-220CFM

AP9412AGI substitution

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AP9412AGI datasheet

 ..1. Size:118K  ape
ap9412agi.pdf pdf_icon

AP9412AGI

AP9412AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 6m Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒

 6.1. Size:94K  ape
ap9412agm-hf.pdf pdf_icon

AP9412AGI

AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o... See More ⇒

 6.2. Size:61K  ape
ap9412agp.pdf pdf_icon

AP9412AGI

AP9412AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an... See More ⇒

 6.3. Size:165K  ape
ap9412agh.pdf pdf_icon

AP9412AGI

AP9412AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, TO-252(H... See More ⇒

Detailed specifications: AP9408GJ, AP9408GM-HF, AP9410AGH-HF, AP9410AGM-HF, AP9410GH-HF, AP9410GM, AP9410GMT-HF, AP9412AGH, AON7408, AP9412AGM-HF, AP9412AGP, AP9412BGM-HF, AP9412CGM-HF, AP9412GH, AP9412GI, AP9412GJ, AP9412GP

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