All MOSFET. AP9412AGI Datasheet

 

AP9412AGI MOSFET. Datasheet pdf. Equivalent

Type Designator: AP9412AGI

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 34.7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 68 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 435 pF

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: TO-220CFM

AP9412AGI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9412AGI Datasheet (PDF)

1.1. ap9412agi.pdf Size:118K _a-power

AP9412AGI
AP9412AGI

AP9412AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Fast Switching Performance BVDSS 30V D Ў Single Drive Requirement RDS(ON) 6m? Ў Full Isolation Package ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

2.1. ap9412agh.pdf Size:165K _a-power

AP9412AGI
AP9412AGI

AP9412AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge D BVDSS 30V Ў Simple Drive Requirement RDS(ON) 6m? Ў Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, ? TO-252(H) low on

2.2. ap9412agm-hf.pdf Size:94K _a-power

AP9412AGI
AP9412AGI

AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 30V D D Ў Ultra_Low On-resistance RDS(ON) 6m? D D Ў Fast Switching Characteristic ID 16A G Ў RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast s

 2.3. ap9412agm.pdf Size:93K _a-power

AP9412AGI
AP9412AGI

AP9412AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V D D ▼ Ultra_Low On-resistance RDS(ON) 6mΩ D D ▼ Fast Switching Characteristic ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

2.4. ap9412agp.pdf Size:61K _a-power

AP9412AGI
AP9412AGI

AP9412AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Lower Gate Charge BVDSS 30V Ў Simple Drive Requirement RDS(ON) 6m? Ў Fast Switching Characteristic ID 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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