AP9468GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9468GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 365 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AP9468GM

AP9468GM Datasheet (PDF)

..1. Size:216K ape
ap9468gm.pdf

AP9468GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 7mD Fast Switching Characteristic ID 14.6AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

0.1. Size:58K ape
ap9468gm-hf.pdf

AP9468GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 7mD Fast Switching Characteristic ID 14.6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

7.1. Size:127K ape
ap9468gp-hf.pdf

AP9468GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS 40V Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rug

7.2. Size:239K ape
ap9468gh.pdf

AP9468GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 40V Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic G ID3 75AS RoHS Compliant & Halogen-FreeDescriptionAP9468 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the low

7.3. Size:102K ape
ap9468gh-hf ap9468gj-hf.pdf

7.4. Size:132K ape
ap9468ghj-hf.pdf

AP9468GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 40V Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic G ID 75AS RoHS CompliantDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ru

7.5. Size:235K ape
ap9468gs.pdf

AP9468GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

7.6. Size:246K ape
ap9468gj.pdf

AP9468GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 40V Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic G ID 75ASDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device desig

7.7. Size:90K ape
ap9468gs-hf.pdf

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