AP9468GM Datasheet and Replacement
Type Designator: AP9468GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 14.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 365 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: SO-8
AP9468GM Datasheet (PDF)
ap9468gm.pdf

AP9468GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 7mD Fast Switching Characteristic ID 14.6AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi
ap9468gm-hf.pdf

AP9468GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 7mD Fast Switching Characteristic ID 14.6AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa
ap9468gp-hf.pdf

AP9468GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS 40V Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rug
ap9468gh.pdf

AP9468GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 40V Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic G ID3 75AS RoHS Compliant & Halogen-FreeDescriptionAP9468 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the low
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