AP9470GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9470GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 10.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 7.5 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de AP9470GM-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP9470GM-HF datasheet
..1. Size:93K ape
ap9470gm-hf.pdf 
AP9470GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 13.5m D Fast Switching Characteristic ID 10.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o
6.1. Size:166K ape
ap9470gm.pdf
AP9470GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 13.5m D Fast Switching Characteristic ID 10.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9470 series are fro
9.1. Size:94K ape
ap9475gm-hf.pdf
AP9475GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID 6.9A G S S RoHS Compliant & Halogen-Free S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.2. Size:217K ape
ap9476gm.pdf
AP9476GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement RDS(ON) 21m D D Fast Switching Characteristic ID 7.8A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
9.3. Size:69K ape
ap9477gm.pdf
AP9477GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 90m D D Fast Switching Characteristic ID 4A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best co
9.4. Size:126K ape
ap9477gk-hf.pdf
AP9477GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch
9.5. Size:93K ape
ap9474gm-hf.pdf
AP9474GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D D D Single Drive Requirement RDS(ON) 10.5m D Surface Mount Package ID 12.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast sw
9.6. Size:98K ape
ap9479gm-hf.pdf
AP9479GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 45m D D Fast Switching Characteristic ID 5.6A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
9.7. Size:97K ape
ap9477gm-hf.pdf
AP9477GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 90m D D Fast Switching Characteristic ID 4A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg
9.8. Size:171K ape
ap9479gm.pdf
AP9479GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS 60V Simple Drive Requirement D D RDS(ON) 45m Lower Gate Charge D D ID 5.6A Fast Switching Characteristic G RoHS Compliant & Halogen-Free S S SO-8 S Description D AP9479 series are fro
9.9. Size:94K ape
ap9476gm-hf.pdf
AP9476GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement RDS(ON) 21m D D Fast Switching Characteristic ID 7.8A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
9.10. Size:169K ape
ap9475gm.pdf
AP9475GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID 6.9A G S S RoHS Compliant & Halogen-Free S SO-8 Description D AP9475 series are from A
9.11. Size:94K ape
ap9478gm.pdf
AP9478GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 64m D D Fast Switching Characteristic ID 4.8A G RoHS Compliant S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin
9.12. Size:92K ape
ap9474gm.pdf
AP9474GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D D Single Drive Requirement D RDS(ON) 10.5m D Surface Mount Package ID 12.8A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design
9.13. Size:812K cn vbsemi
ap9474gm.pdf
AP9474GM www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CC
Otros transistores... AP9468GJ-HF, AP9468GJ, AP9468GM, AP9468GP-HF, AP9468GS-HF, AP9469GH, AP9469GJ, AP9469GM, AO3400A, AP9474GM, AP9475GM-HF, AP9476GM-HF, AP9477GK-HF, AP9477GM-HF, AP9478GM, AP9479GM-HF, AP9487GM-HF
