AP9470GM-HF Datasheet and Replacement
Type Designator: AP9470GM-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id| ⓘ - Maximum Drain Current: 10.2
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 11
nC
tr ⓘ - Rise Time: 7.5
nS
Cossⓘ -
Output Capacitance: 120
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135
Ohm
Package:
SO-8
-
MOSFET ⓘ Cross-Reference Search
AP9470GM-HF Datasheet (PDF)
..1. Size:93K ape
ap9470gm-hf.pdf 
AP9470GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 13.5mD Fast Switching Characteristic ID 10.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o
6.1. Size:166K ape
ap9470gm.pdf
AP9470GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 13.5mD Fast Switching Characteristic ID 10.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9470 series are fro
9.1. Size:94K ape
ap9475gm-hf.pdf
AP9475GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID 6.9AGSS RoHS Compliant & Halogen-FreeSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fa
9.2. Size:217K ape
ap9476gm.pdf
AP9476GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement RDS(ON) 21mDD Fast Switching Characteristic ID 7.8AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi
9.3. Size:69K ape
ap9477gm.pdf
AP9477GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 60V DDLower Gate Charge RDS(ON) 90m DDFast Switching Characteristic ID 4A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best co
9.4. Size:126K ape
ap9477gk-hf.pdf
AP9477GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switch
9.5. Size:93K ape
ap9474gm-hf.pdf
AP9474GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VDDD Single Drive Requirement RDS(ON) 10.5mD Surface Mount Package ID 12.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast sw
9.6. Size:98K ape
ap9479gm-hf.pdf
AP9479GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDD Lower Gate Charge RDS(ON) 45mDD Fast Switching Characteristic ID 5.6AG RoHS CompliantSSSO-8SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
9.7. Size:97K ape
ap9477gm-hf.pdf
AP9477GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDD Lower Gate Charge RDS(ON) 90mDD Fast Switching Characteristic ID 4AG RoHS Compliant SSSO-8 SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg
9.8. Size:171K ape
ap9479gm.pdf
AP9479GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS 60V Simple Drive Requirement DD RDS(ON) 45m Lower Gate Charge DD ID 5.6A Fast Switching Characteristic G RoHS Compliant & Halogen-FreeSSSO-8SDescriptionDAP9479 series are fro
9.9. Size:94K ape
ap9476gm-hf.pdf
AP9476GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement RDS(ON) 21mDD Fast Switching Characteristic ID 7.8AG RoHS Compliant & Halogen-Free SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas
9.10. Size:169K ape
ap9475gm.pdf
AP9475GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID 6.9AGSS RoHS Compliant & Halogen-FreeSSO-8DescriptionDAP9475 series are from A
9.11. Size:94K ape
ap9478gm.pdf
AP9478GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDD Lower Gate Charge RDS(ON) 64mDD Fast Switching Characteristic ID 4.8AG RoHS CompliantSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin
9.12. Size:92K ape
ap9474gm.pdf
AP9474GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VDD Single Drive Requirement D RDS(ON) 10.5mD Surface Mount Package ID 12.8AGSSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design
9.13. Size:812K cn vbsemi
ap9474gm.pdf
AP9474GMwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CC
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History: HGE055NE4A
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