AP9972GR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9972GR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO-262

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AP9972GR Datasheet (PDF)

..1. Size:95K ape
ap9972gr.pdf

AP9972GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 18m RoHS Compliant ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiven

7.1. Size:165K ape
ap9972gs.pdf

AP9972GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP9972 series are from Advanced Power innovated design and siliconprocess technology to achieve th

7.2. Size:153K ape
ap9972gp.pdf

7.3. Size:99K ape
ap9972gs p-hf.pdf

AP9972GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DSTO-263(S)ruggedized device design,

7.4. Size:94K ape
ap9972gh-hf.pdf

AP9972GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrugge

7.5. Size:230K ape
ap9972gh.pdf

AP9972GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAP9972 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos

7.6. Size:95K ape
ap9972gi-hf.pdf

AP9972GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m Lower On-resistance ID 35AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDSruggedized dev

7.7. Size:211K ape
ap9972gi.pdf

AP9972GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m Lower On-resistance ID 35AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design

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