AP9972GR Specs and Replacement

Type Designator: AP9972GR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-262

AP9972GR substitution

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AP9972GR datasheet

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ap9972gr.pdf pdf_icon

AP9972GR

AP9972GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 18m RoHS Compliant ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiven... See More ⇒

 7.1. Size:165K  ape
ap9972gs.pdf pdf_icon

AP9972GR

AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

 7.2. Size:153K  ape
ap9972gp.pdf pdf_icon

AP9972GR

AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

 7.3. Size:99K  ape
ap9972gs p-hf.pdf pdf_icon

AP9972GR

AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, ... See More ⇒

Detailed specifications: AP9971GP-HF, AP9971GS-HF, AP9972AGI, AP9972AGP-HF, AP9972AGR-HF, AP9972GH-HF, AP9972GI-HF, AP9972GP-HF, K2611, AP9972GS-HF, AP9973GD, AP9973GH-HF, AP9973GI, AP9973GJ-HF, AP9973GM, AP9973GP, AP9973GS

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