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 ap9985gm.pdf

AP9985GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 40V D D Fast Switching Speed D RDS(ON) 15m D Surface Mount Package ID 10A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low

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 ap9985gm-hf.pdf

AP9985GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 40V D D Simple Drive Requirement D RDS(ON) 15m D Fast Switching Characteristic ID 10A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP9985 series are from Advanced Power innovated design and silicon process technology t

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 ap9980gh-hf.pdf

AP9980GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description AP9980 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowe

 9.2. Size:198K  ape
 ap9987gj.pdf

AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe

 9.3. Size:218K  ape
 ap9980gj.pdf

AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo

 9.4. Size:97K  ape
 ap9987gh-hf ap9987gj-hf.pdf

AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe

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 ap9987gh j-hf.pdf

AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switchi

 9.6. Size:233K  ape
 ap9987gh.pdf

AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe

 9.7. Size:209K  ape
 ap9980gm.pdf

AP9980GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 52m D1 D1 Surface Mount Package ID 4.6A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d

 9.8. Size:208K  ape
 ap9987gjv.pdf

AP9987GJV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible o

 9.9. Size:208K  ape
 ap9987gm.pdf

AP9987GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 90m D1 D1 Surface Mount Package ID 3.5A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d

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 ap9980gh-hf ap9980gj-hf.pdf

AP9980GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-

 9.11. Size:174K  ape
 ap9980gh.pdf

AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo

 9.12. Size:97K  ape
 ap9980gm-hf.pdf

AP9980GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 D1 Single Drive Requirement RDS(ON) 52m D1 Surface Mount Package ID 4.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

 9.13. Size:831K  cn vbsemi
 ap9987gj.pdf

AP9987GJ www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise