All MOSFET. AP9985GM Datasheet

 

AP9985GM MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP9985GM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.7 nC
   trⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SO-8

 AP9985GM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9985GM Datasheet (PDF)

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ap9985gm.pdf

AP9985GM
AP9985GM

AP9985GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 40VDD Fast Switching Speed D RDS(ON) 15mD Surface Mount Package ID 10AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, ultra low

 0.1. Size:97K  ape
ap9985gm-hf.pdf

AP9985GM
AP9985GM

AP9985GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 40VDD Simple Drive Requirement D RDS(ON) 15mD Fast Switching Characteristic ID 10AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP9985 series are from Advanced Power innovated design andsilicon process technology t

 9.1. Size:233K  ape
ap9980gh-hf.pdf

AP9985GM
AP9985GM

AP9980GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAP9980 series are from Advanced Power innovated design andGDSsilicon process technology to achieve the lowe

 9.2. Size:198K  ape
ap9987gj.pdf

AP9985GM
AP9985GM

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe

 9.3. Size:218K  ape
ap9980gj.pdf

AP9985GM
AP9985GM

AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo

 9.4. Size:97K  ape
ap9987gh-hf ap9987gj-hf.pdf

AP9985GM
AP9985GM

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe

 9.5. Size:97K  ape
ap9987gh j-hf.pdf

AP9985GM
AP9985GM

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switchi

 9.6. Size:233K  ape
ap9987gh.pdf

AP9985GM
AP9985GM

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe

 9.7. Size:209K  ape
ap9980gm.pdf

AP9985GM
AP9985GM

AP9980GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 52mD1D1 Surface Mount Package ID 4.6AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d

 9.8. Size:208K  ape
ap9987gjv.pdf

AP9985GM
AP9985GM

AP9987GJVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible o

 9.9. Size:208K  ape
ap9987gm.pdf

AP9985GM
AP9985GM

AP9987GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 90mD1D1 Surface Mount Package ID 3.5AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d

 9.10. Size:100K  ape
ap9980gh-hf ap9980gj-hf.pdf

AP9985GM
AP9985GM

AP9980GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-

 9.11. Size:174K  ape
ap9980gh.pdf

AP9985GM
AP9985GM

AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo

 9.12. Size:97K  ape
ap9980gm-hf.pdf

AP9985GM
AP9985GM

AP9980GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 80VD2D2D1 Single Drive Requirement RDS(ON) 52mD1 Surface Mount Package ID 4.6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 9.13. Size:831K  cn vbsemi
ap9987gj.pdf

AP9985GM
AP9985GM

AP9987GJwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

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