AP9997BGJ-HF Todos los transistores

 

AP9997BGJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9997BGJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
   Paquete / Cubierta: TO-251
 

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AP9997BGJ-HF Datasheet (PDF)

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 ap9997bghj-hf.pdf pdf_icon

AP9997BGJ-HF

AP9997BGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 145m Fast Switching Characteristic ID 9.3AG Halogen Free & RoHS Compliant ProductSDescriptionAP9997B series are from Advanced Power innovated design and siliconGDprocess technology to

 8.1. Size:182K  ape
 ap9997gm.pdf pdf_icon

AP9997BGJ-HF

AP9997GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95VD2D2 Single Drive Requirement RDS(ON) 110mD1D1 Surface Mount Package ID 3AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,rugge

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 ap9997gh-hf ap9997gj-hf.pdf pdf_icon

AP9997BGJ-HF

AP9997GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11AG RoHS Compliant & Halogen-FreeSDescriptionGDAdvanced Power MOSFETs from APEC provide theS TO-252(H)designer with the best combination of fast

 8.3. Size:185K  ape
 ap9997agh.pdf pdf_icon

AP9997BGJ-HF

AP9997AGH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower Gate Charge RDS(ON) 185m Fast Switching Characteristic ID 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP9997A series are from Advanced Power innovat

MOSTRAR MÁS

Otros transistores... AP9992GI-HF , AP9992GP-A-HF , AP9992GP-HF , AP9992GR-HF , AP9995GH-HF , AP9995GJ-HF , AP9997AGH-HF , AP9997BGH-HF , IRF9540N , AP9997GH-HF , AP9997GJ-HF , AP9997GK , AP9997GM , AP9997GP-HF , AP9998GH-HF , AP9998GS-HF , AP99T03GP-HF .

History: 2SJ494 | NTMD3P03R2G | STB32N65M5 | VS4698AP | DMP21D0UFB4-P | AOI2N60 | BSZ900N15NS3G

 

 
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