AP9997BGJ-HF Specs and Replacement

Type Designator: AP9997BGJ-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm

Package: TO-251

AP9997BGJ-HF substitution

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AP9997BGJ-HF datasheet

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ap9997bghj-hf.pdf pdf_icon

AP9997BGJ-HF

AP9997BGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 145m Fast Switching Characteristic ID 9.3A G Halogen Free & RoHS Compliant Product S Description AP9997B series are from Advanced Power innovated design and silicon G D process technology to... See More ⇒

 8.1. Size:182K  ape
ap9997gm.pdf pdf_icon

AP9997BGJ-HF

AP9997GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95V D2 D2 Single Drive Requirement RDS(ON) 110m D1 D1 Surface Mount Package ID 3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, rugge... See More ⇒

 8.2. Size:97K  ape
ap9997gh-hf ap9997gj-hf.pdf pdf_icon

AP9997BGJ-HF

AP9997GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11A G RoHS Compliant & Halogen-Free S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast... See More ⇒

 8.3. Size:185K  ape
ap9997agh.pdf pdf_icon

AP9997BGJ-HF

AP9997AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower Gate Charge RDS(ON) 185m Fast Switching Characteristic ID 8.8A G RoHS Compliant & Halogen-Free S Description AP9997A series are from Advanced Power innovat... See More ⇒

Detailed specifications: AP9992GI-HF, AP9992GP-A-HF, AP9992GP-HF, AP9992GR-HF, AP9995GH-HF, AP9995GJ-HF, AP9997AGH-HF, AP9997BGH-HF, SKD502T, AP9997GH-HF, AP9997GJ-HF, AP9997GK, AP9997GM, AP9997GP-HF, AP9998GH-HF, AP9998GS-HF, AP99T03GP-HF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs