3SK249 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3SK249
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12.5 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: 2-2K1B
Búsqueda de reemplazo de 3SK249 MOSFET
3SK249 Datasheet (PDF)
3sk249.pdf

3SK249 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 20 fF (typ.) rss Low noise figure.: NF = 1.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.5
3sk248.pdf

Ordering number:ENN4540N-Channel Enhancement Silicon MOSFET3SK248Muting/Switching ApplicationsFeatures Package Dimensions MOSFET with a back gate terminal.unit:mm Enhancement type.2100A Small ON resistance.[3SK248] Small-sized package permitting 3SK248-applied sets1.9to be made smaller and slimmer.0.95 0.950.40.164 30 to 0.11 20.60.95 0.85
3sk241.pdf

High Frequency FETs 3SK2413SK241GaAs N-Channel MESUnit : mmFor VHF-UHF amplification+0.22.8 0.3+0.20.65 0.15 1.5 0.3 0.65 0.15 Features Low noise-figure (NF)0.5R4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertionby taping/magazine packing are available.3 2 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rat
Otros transistores... 3N161 , 3N165 , 3N166 , 3SK199 , 3SK207 , 3SK225 , 3SK226 , 3SK232 , IRFB4227 , 3SK256 , 3SK257 , 3SK258 , 3SK259 , 3SK260 , 3SK291 , 3SK292 , 3SK293 .
History: STW32NM50N | WM02N45M | IRFS523 | RSR025N03FRA | PA110BDA
History: STW32NM50N | WM02N45M | IRFS523 | RSR025N03FRA | PA110BDA



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