3SK249 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3SK249

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12.5 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.03 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: 2-2K1B

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3SK249 datasheet

 ..1. Size:187K  toshiba
 3sk249.pdf pdf_icon

3SK249

3SK249 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance. Low reverse transfer capacitance C = 20 fF (typ.) rss Low noise figure. NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5

 9.1. Size:69K  sanyo
 3sk248.pdf pdf_icon

3SK249

Ordering number ENN4540 N-Channel Enhancement Silicon MOSFET 3SK248 Muting/Switching Applications Features Package Dimensions MOSFET with a back gate terminal. unit mm Enhancement type. 2100A Small ON resistance. [3SK248] Small-sized package permitting 3SK248-applied sets 1.9 to be made smaller and slimmer. 0.95 0.95 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85

 9.2. Size:30K  panasonic
 3sk241.pdf pdf_icon

3SK249

High Frequency FETs 3SK241 3SK241 GaAs N-Channel MES Unit mm For VHF-UHF amplification +0.2 2.8 0.3 +0.2 0.65 0.15 1.5 0.3 0.65 0.15 Features Low noise-figure (NF) 0.5R 4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rat

Otros transistores... 3N161, 3N165, 3N166, 3SK199, 3SK207, 3SK225, 3SK226, 3SK232, 10N60, 3SK256, 3SK257, 3SK258, 3SK259, 3SK260, 3SK291, 3SK292, 3SK293