All MOSFET. 3SK249 Datasheet

 

3SK249 MOSFET. Datasheet pdf. Equivalent

Type Designator: 3SK249

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.1 W

Maximum Drain-Source Voltage |Vds|: 12.5 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 0.03 A

Maximum Junction Temperature (Tj): 125 °C

Package: 2-2K1B

3SK249 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3SK249 Datasheet (PDF)

1.1. 3sk249.pdf Size:187K _toshiba

3SK249
3SK249

3SK249 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 20 fF (typ.) rss Low noise figure.: NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate 1

5.1. 3sk248.pdf Size:69K _sanyo

3SK249
3SK249

Ordering number:ENN4540 N-Channel Enhancement Silicon MOSFET 3SK248 Muting/Switching Applications Features Package Dimensions MOSFET with a back gate terminal. unit:mm Enhancement type. 2100A Small ON resistance. [3SK248] Small-sized package permitting 3SK248-applied sets 1.9 to be made smaller and slimmer. 0.95 0.95 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85 1 : Gat

5.2. 3sk241.pdf Size:30K _panasonic

3SK249
3SK249

High Frequency FETs 3SK241 3SK241 GaAs N-Channel MES Unit : mm For VHF-UHF amplification +0.2 2.8 0.3 +0.2 0.65 0.15 1.5 0.3 0.65 0.15 Features Low noise-figure (NF) 0.5R 4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit

Datasheet: 3N161 , 3N165 , 3N166 , 3SK199 , 3SK207 , 3SK225 , 3SK226 , 3SK232 , RFP50N06 , 3SK256 , 3SK257 , 3SK258 , 3SK259 , 3SK260 , 3SK291 , 3SK292 , 3SK293 .

 


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