3SK318 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3SK318
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 6 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 0.02 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 0.9 pF
Paquete / Cubierta: CMPAK-4
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3SK318 Datasheet (PDF)
3sk318.pdf

3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code: PTSP0004ZA-A(Package name: CMPAK-4) 231. Source2.
3sk319.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
3sk317.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... 3SK257 , 3SK258 , 3SK259 , 3SK260 , 3SK291 , 3SK292 , 3SK293 , 3SK294 , 2N7000 , 3SK324 , 2N2608 , 2N2609 , 2N3684 , 2N3685 , 2N3686 , 2N3687 , 2N3796 .
History: STP11NK50ZFP | SSM3K03FE | AP4575GM-HF | CTD03N003 | IRFS645
History: STP11NK50ZFP | SSM3K03FE | AP4575GM-HF | CTD03N003 | IRFS645



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