3SK318 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 3SK318
Маркировка: YB-
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 6 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.02 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 0.9 pf
Тип корпуса: CMPAK-4
- подбор MOSFET транзистора по параметрам
3SK318 Datasheet (PDF)
3sk318.pdf

3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code: PTSP0004ZA-A(Package name: CMPAK-4) 231. Source2.
3sk319.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
3sk317.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .



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