3SK318. Аналоги и основные параметры

Наименование производителя: 3SK318

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 6 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 6 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.02 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 0.9 pf

Тип корпуса: CMPAK-4

Аналог (замена) для 3SK318

- подборⓘ MOSFET транзистора по параметрам

 

3SK318 даташит

 ..1. Size:184K  renesas
 3sk318.pdf pdf_icon

3SK318

3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code PTSP0004ZA-A (Package name CMPAK-4) 2 3 1. Source 2.

 9.1. Size:211K  renesas
 3sk319.pdf pdf_icon

3SK318

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:190K  renesas
 3sk317.pdf pdf_icon

3SK318

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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