3SK318 Datasheet and Replacement
Type Designator: 3SK318
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 6 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.9 pF
Package: CMPAK-4
3SK318 substitution
3SK318 Datasheet (PDF)
3sk318.pdf

3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code: PTSP0004ZA-A(Package name: CMPAK-4) 231. Source2.
3sk319.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
3sk317.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 3SK257 , 3SK258 , 3SK259 , 3SK260 , 3SK291 , 3SK292 , 3SK293 , 3SK294 , 2N7000 , 3SK324 , 2N2608 , 2N2609 , 2N3684 , 2N3685 , 2N3686 , 2N3687 , 2N3796 .
History: 2SK2880
Keywords - 3SK318 MOSFET datasheet
3SK318 cross reference
3SK318 equivalent finder
3SK318 lookup
3SK318 substitution
3SK318 replacement
History: 2SK2880



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