3SK318 Specs and Replacement
Type Designator: 3SK318
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 6 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 0.9 pF
Package: CMPAK-4
3SK318 substitution
- MOSFET ⓘ Cross-Reference Search
3SK318 datasheet
3sk318.pdf
3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code PTSP0004ZA-A (Package name CMPAK-4) 2 3 1. Source 2. ... See More ⇒
3sk319.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
3sk317.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: 3SK257, 3SK258, 3SK259, 3SK260, 3SK291, 3SK292, 3SK293, 3SK294, AON7408, 3SK324, 2N2608, 2N2609, 2N3684, 2N3685, 2N3686, 2N3687, 2N3796
Keywords - 3SK318 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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