2N3955 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3955
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 4 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO-71
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2N3955 Datasheet (PDF)
2n3954 2n3955 2n3956.pdf

Databook.fxp 1/14/99 11:29 AM Page B-501/99 B-52N3954, 2N3955, 2N3956N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Tem
2n3958.pdf

2N3958Vishay SiliconixMonolithic N-Channel JFET DualPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)1.0 to 4.5 50 1 50 25FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed,Accuracy Temp-
2n3957 2n3958.pdf

Databook.fxp 1/14/99 11:30 AM Page B-6B-6 01/992N3957, 2N3958N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Temperature
Otros transistores... 2N3797 , 2N3820 , 2N3821 , 2N3822 , 2N3823 , 2N3921 , 2N3922 , 2N3954 , IRF4905 , 2N3956 , 2N5018 , 2N5019 , 2N3957 , 2N3958 , 2N3993 , 2N3993A , 2N3994 .
History: IPP60R210CFD7 | IPP60R120P7 | AP9962BGH-HF | NP20P04SLG | IPP80P04P4-07 | NCE65N900K | IRFS642
History: IPP60R210CFD7 | IPP60R120P7 | AP9962BGH-HF | NP20P04SLG | IPP80P04P4-07 | NCE65N900K | IRFS642



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