All MOSFET. 2N3955 Datasheet

 

2N3955 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N3955

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.25 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 4 V

Maximum Drain Current |Id|: 0.05 A

Package: TO-71

2N3955 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N3955 Datasheet (PDF)

1.1. 2n3954 2n3955 2n3956.pdf Size:67K _interfet

2N3955

Databook.fxp 1/14/99 11:29 AM Page B-5 01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA ? High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85C Case Temperature

5.1. 2n395.pdf Size:260K _rca

2N3955

5.2. 2n3958.pdf Size:55K _vishay

2N3955
2N3955

2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 1.0 to 4.5 50 1 50 25 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Accuracy Temp-Compensated,

 5.3. 2n3957 2n3958.pdf Size:66K _interfet

2N3955

Databook.fxp 1/14/99 11:30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA ? High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85C Case Temperature (both si

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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