2N5197 Todos los transistores

 

2N5197 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5197

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4 V

|Id|ⓘ - Corriente continua de drenaje: 0.007 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO-71

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2N5197 datasheet

 ..1. Size:65K  vishay
2n5196 2n5197 2n5198 2n5199.pdf pdf_icon

2N5197

2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D T

 9.1. Size:217K  motorola
2n5191 2n5192.pdf pdf_icon

2N5197

 9.2. Size:212K  motorola
2n5194 2n5195.pdf pdf_icon

2N5197

Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS

 9.3. Size:230K  st
2n5191 2n5192.pdf pdf_icon

2N5197

2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure

Otros transistores... 2N4868A , 2N4869A , 2N5020 , 2N5021 , 2N5114 , 2N5115 , 2N5116 , 2N5196 , IRLZ44N , 2N5198 , 2N5199 , 2N5245 , 2N5246 , 2N5397 , 2N5398 , 2N5432 , 2N5433 .

 

 

 


 
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