Справочник MOSFET. 2N5197

 

2N5197 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N5197

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.5 W

Предельно допустимое напряжение сток-исток |Uds|: 50 V

Предельно допустимое напряжение затвор-исток |Ugs|: 4 V

Максимально допустимый постоянный ток стока |Id|: 0.007 A

Максимальная температура канала (Tj): 150 °C

Тип корпуса: TO-71

Аналог (замена) для 2N5197

 

 

2N5197 Datasheet (PDF)

0.1. 2n5196 2n5197 2n5198 2n5199.pdf Size:65K _vishay

2N5197
2N5197

2N5196/5197/5198/5199Vishay SiliconixMonolithic N-Channel JFET DualsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)2N5196 0.7 to 4 50 1 15 52N5197 0.7 to 4 50 1 15 52N5198 0.7 to 4 50 1 15 102N5199 0.7 to 4 50 1 15 15FEATURES BENEFITS APPLICATIONSD Monolithic Design D T

9.1. 2n5194 2n5195.pdf Size:212K _motorola

2N5197
2N5197

Order this documentMOTOROLAby 2N5194/DSEMICONDUCTOR TECHNICAL DATA2N51942N5195*Silicon PNP Power Transistors*Motorola Preferred Device. . . for use in power amplifier and switching ci

9.2. 2n5191 2n5192.pdf Size:217K _motorola

2N5197
2N5197

Order this documentMOTOROLAby 2N5191/DSEMICONDUCTOR TECHNICAL DATA2N51912N5192*Silicon NPN Power Transistors*Motorola Preferred Device. . . for use in power amplifier and switching ci

 9.3. 2n5195.pdf Size:206K _st

2N5197
2N5197

2N5195Low voltage PNP power transistorFeatures Low saturation voltage PNP transistorApplication Audio, power linear and switching equipment12Description3SOT-32The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1.

9.4. 2n5191 2n5192.pdf Size:230K _st

2N5197
2N5197

2N51912N5192NPN power transistorsFeatures NPN transistorsApplications Linear and switching industrial equipmentDescription12The devices are manufactured in Planar 3technology with Base Island layout. The SOT-32resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195.Figure

 9.5. 2n5190 2n5191 2n5192.pdf Size:61K _central

2N5197

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.6. 2n5194g.pdf Size:86K _onsemi

2N5197
2N5197

2N5194, 2N5195Preferred DevicesSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.http://onsemi.comFeatures Pb-Free Packages are Available* 4 AMPEREPOWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICON

9.7. 2n5190g.pdf Size:84K _onsemi

2N5197
2N5197

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

9.8. 2n5195g.pdf Size:86K _onsemi

2N5197
2N5197

2N5194, 2N5195Preferred DevicesSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.http://onsemi.comFeatures Pb-Free Packages are Available* 4 AMPEREPOWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICON

9.9. 2n5190 2n5191 2n5192.pdf Size:84K _onsemi

2N5197
2N5197

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

9.10. 2n5192g.pdf Size:84K _onsemi

2N5197
2N5197

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

9.11. 2n5191g.pdf Size:84K _onsemi

2N5197
2N5197

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

9.12. 2n5194 2n5195.pdf Size:86K _onsemi

2N5197
2N5197

2N5194, 2N5195Preferred DevicesSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.http://onsemi.comFeatures Pb-Free Packages are Available* 4 AMPEREPOWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICON

9.13. 2n5191 92.pdf Size:130K _cdil

2N5197
2N5197

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS 2N51912N5192TO126 Plastic PackageECBUse in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N5191 2N5192 UNITCollector -Base Voltage VCBO 60 80 VCollector -Emitter Voltage VCEO 60 80 VEmitter Base Vo

9.14. 2n5190 2n5191 2n5192.pdf Size:42K _jmnic

2N5197
2N5197

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193,2N5194,2N5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

9.15. 2n5193 2n5194 2n5195.pdf Size:42K _jmnic

2N5197
2N5197

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190,2N5191,2N5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

9.16. 2n5190 2n5191 2n5192.pdf Size:118K _inchange_semiconductor

2N5197
2N5197

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193/5194/5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max

9.17. 2n5193 2n5194 2n5195.pdf Size:118K _inchange_semiconductor

2N5197
2N5197

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190/5191/5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max

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