All MOSFET. 2N5197 Datasheet

 

2N5197 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5197

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 4 V

Maximum Drain Current |Id|: 0.007 A

Maximum Junction Temperature (Tj): 150 °C

Package: TO-71

2N5197 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N5197 Datasheet (PDF)

1.1. 2n5196 2n5197 2n5198 2n5199.pdf Size:65K _vishay

2N5197
2N5197

2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D

5.1. 2n5190g.pdf Size:84K _upd

2N5197
2N5197

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON • Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS

5.2. 2n5191g.pdf Size:84K _upd

2N5197
2N5197

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON • Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS

5.3. 2n5194g.pdf Size:86K _upd

2N5197
2N5197

2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features • Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) PNP SILICON ÎÎÎÎÎÎÎ

5.4. 2n5195g.pdf Size:86K _upd

2N5197
2N5197

2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features • Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) PNP SILICON ÎÎÎÎÎÎÎ

5.5. 2n5192g.pdf Size:84K _upd

2N5197
2N5197

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON • Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS

5.6. 2n5194 2n5195.pdf Size:212K _motorola

2N5197
2N5197

Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON PNP II

5.7. 2n5191 2n5192.pdf Size:217K _motorola

2N5197
2N5197

Order this document MOTOROLA by 2N5191/D SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. 4 AMPERE IIIIIIIIIIIIIIIIIIIIIII POWER TRANSISTORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII SILICON NPN I

5.8. 2n5195.pdf Size:206K _st

2N5197
2N5197

2N5195 Low voltage PNP power transistor Features Low saturation voltage PNP transistor Application Audio, power linear and switching equipment 1 2 Description 3 SOT-32 The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1. Internal sch

5.9. 2n5191 2n5192.pdf Size:230K _st

2N5197
2N5197

2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure 1. Internal

5.10. 2n5190 2n5191 2n5192.pdf Size:61K _central

2N5197

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.11. 2n5190 2n5191 2n5192.pdf Size:84K _onsemi

2N5197
2N5197

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS Pb-Fre

5.12. 2n5194 2n5195.pdf Size:86K _onsemi

2N5197
2N5197

2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (Note 1) PNP SILICON IIIIIIIIIIIIIIIIIII IIIIIIIIIII III I

5.13. 2n5191 92.pdf Size:130K _cdil

2N5197
2N5197

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package E C B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5191 2N5192 UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitter Voltage VCEO 60 80 V Emitter Base Volta

5.14. 2n5190 2n5191 2n5192.pdf Size:42K _jmnic

2N5197
2N5197

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION · ·With TO-126 package ·Complement to type 2N5193,2N5194,2N5195 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rat

5.15. 2n5193 2n5194 2n5195.pdf Size:42K _jmnic

2N5197
2N5197

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION · ·With TO-126 package ·Complement to type 2N5190,2N5191,2N5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rat

5.16. 2n5190 2n5191 2n5192.pdf Size:118K _inchange_semiconductor

2N5197
2N5197

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5193/5194/5195 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute ma

5.17. 2n5193 2n5194 2n5195.pdf Size:118K _inchange_semiconductor

2N5197
2N5197

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2N5190/5191/5192 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5193 2N5194 2N5195 Ў¤ Absolute maximu

Datasheet: 2N4868A , 2N4869A , 2N5020 , 2N5021 , 2N5114 , 2N5115 , 2N5116 , 2N5196 , IRFZ46N , 2N5198 , 2N5199 , 2N5245 , 2N5246 , 2N5397 , 2N5398 , 2N5432 , 2N5433 .

 


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