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2N5197 Specs and Replacement


   Type Designator: 2N5197
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.007 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Package: TO-71
 

 2N5197 substitution

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2N5197 Specs

 ..1. Size:65K  vishay
2n5196 2n5197 2n5198 2n5199.pdf pdf_icon

2N5197

2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D T... See More ⇒

 9.1. Size:217K  motorola
2n5191 2n5192.pdf pdf_icon

2N5197

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 9.2. Size:212K  motorola
2n5194 2n5195.pdf pdf_icon

2N5197

Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS ... See More ⇒

 9.3. Size:230K  st
2n5191 2n5192.pdf pdf_icon

2N5197

2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure ... See More ⇒

Detailed specifications: 2N4868A , 2N4869A , 2N5020 , 2N5021 , 2N5114 , 2N5115 , 2N5116 , 2N5196 , IRLZ44N , 2N5198 , 2N5199 , 2N5245 , 2N5246 , 2N5397 , 2N5398 , 2N5432 , 2N5433 .

Keywords - 2N5197 MOSFET specs

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