2N5245 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5245
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 1 V
|Id|ⓘ - Corriente continua de drenaje: 0.015 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO-92
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2N5245 Datasheet (PDF)
2n5245.pdf

2N5245N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So
2n5246.pdf

2N5246N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So
2n5241.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25) SYMBOL PA
Otros transistores... 2N5021 , 2N5114 , 2N5115 , 2N5116 , 2N5196 , 2N5197 , 2N5198 , 2N5199 , 10N60 , 2N5246 , 2N5397 , 2N5398 , 2N5432 , 2N5433 , 2N5434 , 2N5452 , 2N5453 .
History: SIB911DK | NCE50NF600I | BUK9Y4R4-40E | MMIX1F360N15T2 | GP1M012A060XX | 2N6917 | IRF5Y5305CM
History: SIB911DK | NCE50NF600I | BUK9Y4R4-40E | MMIX1F360N15T2 | GP1M012A060XX | 2N6917 | IRF5Y5305CM



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