All MOSFET. 2N5245 Datasheet

 

2N5245 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5245

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 1 V

Maximum Drain Current |Id|: 0.015 A

Maximum Junction Temperature (Tj): 150 °C

Package: TO-92

2N5245 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N5245 Datasheet (PDF)

1.1. 2n5245.pdf Size:26K _fairchild_semi

2N5245
2N5245

2N5245 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Vol

5.1. 2n5246.pdf Size:26K _fairchild_semi

2N5245
2N5245

2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Vol

5.2. 2n5241.pdf Size:39K _jmnic

2N5245
2N5245

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25?) SYMBOL PARAMET

 5.3. 2n5249.pdf Size:43K _microelectronics

2N5245

5.4. 2n5240.pdf Size:39K _inchange_semiconductor

2N5245
2N5245

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION ·High Voltage: VCEO(SUS)= 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCER(SU

 5.5. 2n5241.pdf Size:116K _inchange_semiconductor

2N5245
2N5245

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5241 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ Switching regulator Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION MAXIMUN RATINGS(Ta=25Ўж

5.6. 2n5240.pdf Size:168K _aeroflex

2N5245
2N5245

NPN Power Silicon Transistor 2N5240 Features • High Voltage: Vceo(sus) = 300 V (min) • Wide Area of Safe Operation • Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. • TO-3 (TO-204AA) Package Maximum Ratings (TA = 25 °C) Ratings Symbol Value Units Collector - Base Voltage VCBO

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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