2N5245. Аналоги и основные параметры

Наименование производителя: 2N5245

Тип транзистора: JFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 1 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.015 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Тип корпуса: TO-92

Аналог (замена) для 2N5245

- подборⓘ MOSFET транзистора по параметрам

 

2N5245 даташит

 ..1. Size:26K  fairchild semi
2n5245.pdfpdf_icon

2N5245

2N5245 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So

 9.1. Size:26K  fairchild semi
2n5246.pdfpdf_icon

2N5245

2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So

 9.2. Size:39K  jmnic
2n5241.pdfpdf_icon

2N5245

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PA

 9.3. Size:43K  microelectronics
2n5249.pdfpdf_icon

2N5245

Другие IGBT... 2N5021, 2N5114, 2N5115, 2N5116, 2N5196, 2N5197, 2N5198, 2N5199, IRFP260N, 2N5246, 2N5397, 2N5398, 2N5432, 2N5433, 2N5434, 2N5452, 2N5453