Справочник MOSFET. 2N5245

 

2N5245 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N5245
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 1 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.015 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Тип корпуса: TO-92

 Аналог (замена) для 2N5245

 

 

2N5245 Datasheet (PDF)

 ..1. Size:26K  fairchild semi
 2n5245.pdf

2N5245 2N5245

2N5245N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So

 9.1. Size:26K  fairchild semi
 2n5246.pdf

2N5245 2N5245

2N5246N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So

 9.2. Size:39K  jmnic
 2n5241.pdf

2N5245 2N5245

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25) SYMBOL PA

 9.3. Size:43K  microelectronics
 2n5249.pdf

2N5245

 9.4. Size:168K  aeroflex
 2n5240.pdf

2N5245 2N5245

NPN Power Silicon Transistor2N5240Features High Voltage: Vceo(sus) = 300 V (min) Wide Area of Safe Operation Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switchingregulators, and high-voltage bridge amplifiers. TO-3 (TO-204AA) PackageMaximum Ratings (TA = 25 C) Ratings Symbol Value UnitsCollector - Base Voltage VCBO

 9.5. Size:1285K  sprague
 2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf

2N5245 2N5245

 9.6. Size:116K  inchange semiconductor
 2n5241.pdf

2N5245 2N5245

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorMAXIMUN RATINGS(Ta=25)

 9.7. Size:39K  inchange semiconductor
 2n5240.pdf

2N5245 2N5245

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION High Voltage- : VCEO(SUS)= 300V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

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