2N5460 Todos los transistores

 

2N5460 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5460

Tipo de FET: JFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 4 V

Corriente continua de drenaje (Id): 0.005 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-92

Búsqueda de reemplazo de MOSFET 2N5460

 

2N5460 Datasheet (PDF)

1.1. 2n5460 2n5461 2n5462.pdf Size:116K _motorola

2N5460
2N5460

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5460/D JFET Amplifiers 2N5460 PChannel Depletion 2 DRAIN thru 2N5462 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit DrainGate Voltage VDG 40 Vdc Reverse GateSource Voltage VGSR 40 Vdc 1 Forward Gate Current IG(f) 10 mAdc 2 3 Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C

1.2. 2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf Size:114K _fairchild_semi

2N5460
2N5460

2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25C unless otherwise noted - Sym

 1.3. 2n5460 sst5460 2n5461 sst5461 2n5462 sst5462.pdf Size:48K _vishay

2N5460
2N5460

2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 40 1 1 2N/SST5461 1 to 7.5 40 1.5 2 2N/SST5462 1.8 to 9 40 2 4 FEATURES BENEFITS APPLICATIONS D High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage Amplifie

1.4. 2n5460 2n5461 2n5462.pdf Size:62K _central

2N5460

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

 1.5. 2n5460 2n5461 2n5462.pdf Size:60K _onsemi

2N5460
2N5460

2N5460, 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features Pb-Free Packages are Available* http://onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain - Gate Voltage VDG 40 Vdc GATE Reverse Gate - Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc 1 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Junction Temp

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top

 


2N5460
  2N5460
  2N5460
  2N5460
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SW1N55D | SKI10297 | SKI10195 | SKI10123 | SKI07171 | SKI07114 | SKI07074 | SKI06106 | SKI06073 | SKI06048 | SKI04044 | SKI04033 | SKI04024 | SKI03087 | SKI03063 |

 

 

 
Back to Top