2N6450 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6450
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 0.01 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO-39
- Selección de transistores por parámetros
2N6450 Datasheet (PDF)
2n6449 2n6450.pdf

Databook.fxp 1/13/99 2:09 PM Page B-24B-24 01/992N6449, 2N6450N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C High Voltage2N6449 2N6450Reverse Gate Source Voltage 300 V 200 VReverse Gate Drain Voltage 300 V 200 VContinuous Forward Gate Current 10 mA 10 mAContinuous Device Power Dissipation 800 mW 800 mWPower Derati
2n6451 2n6452.pdf

Databook.fxp 1/13/99 2:09 PM Page B-2501/99 B-252N6451, 2N6452N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6451 2N6452 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers
2n6453 2n6454.pdf

Databook.fxp 1/13/99 2:09 PM Page B-26B-26 01/992N6453, 2N6454N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6453 2N6454 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers
Otros transistores... 2N5911 , 2N5912 , 2N5949 , 2N5950 , 2N5951 , 2N5952 , 2N5953 , 2N6449 , IRFZ46N , 2N6451 , 2N6452 , 2N6453 , 2N6454 , 2N6804 , 2N6806 , 2N7091 , 2N7288D .
History: TMPF13N50A | SVF7N60CF | IRF7309IPBF | JS65R170BM | WFY3N02 | APT904R2AN | WMB060N08LG2
History: TMPF13N50A | SVF7N60CF | IRF7309IPBF | JS65R170BM | WFY3N02 | APT904R2AN | WMB060N08LG2



Liste
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