2N6450 Datasheet. Specs and Replacement
Type Designator: 2N6450 📄📄
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.01 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
|VGSoff|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
Package: TO-39
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2N6450 substitution
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2N6450 datasheet
2n6449 2n6450.pdf
Databook.fxp 1/13/99 2 09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C High Voltage 2N6449 2N6450 Reverse Gate Source Voltage 300 V 200 V Reverse Gate Drain Voltage 300 V 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derati... See More ⇒
2n6451 2n6452.pdf
Databook.fxp 1/13/99 2 09 PM Page B-25 01/99 B-25 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers 2N6451 2N6452 Low-Noise, High Gain Reverse Gate Source Voltage 20 V 25 V Amplifiers Reverse Gate Drain Voltage 20 V 25 V Continuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers... See More ⇒
2n6453 2n6454.pdf
Databook.fxp 1/13/99 2 09 PM Page B-26 B-26 01/99 2N6453, 2N6454 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers 2N6453 2N6454 Low-Noise, High Gain Reverse Gate Source Voltage 20 V 25 V Amplifiers Reverse Gate Drain Voltage 20 V 25 V Continuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers... See More ⇒
Detailed specifications: 2N5911, 2N5912, 2N5949, 2N5950, 2N5951, 2N5952, 2N5953, 2N6449, SI2302, 2N6451, 2N6452, 2N6453, 2N6454, 2N6804, 2N6806, 2N7091, 2N7288D
Keywords - 2N6450 MOSFET specs
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History: 2N5906
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