2N6451 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6451
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 3.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.02 A
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO-72
Búsqueda de reemplazo de MOSFET 2N6451
Principales características: 2N6451
2n6451 2n6452.pdf
Databook.fxp 1/13/99 2 09 PM Page B-25 01/99 B-25 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers 2N6451 2N6452 Low-Noise, High Gain Reverse Gate Source Voltage 20 V 25 V Amplifiers Reverse Gate Drain Voltage 20 V 25 V Continuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers
2n6449 2n6450.pdf
Databook.fxp 1/13/99 2 09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C High Voltage 2N6449 2N6450 Reverse Gate Source Voltage 300 V 200 V Reverse Gate Drain Voltage 300 V 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derati
2n6453 2n6454.pdf
Databook.fxp 1/13/99 2 09 PM Page B-26 B-26 01/99 2N6453, 2N6454 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers 2N6453 2N6454 Low-Noise, High Gain Reverse Gate Source Voltage 20 V 25 V Amplifiers Reverse Gate Drain Voltage 20 V 25 V Continuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers
Otros transistores... 2N5912 , 2N5949 , 2N5950 , 2N5951 , 2N5952 , 2N5953 , 2N6449 , 2N6450 , AO3407 , 2N6452 , 2N6453 , 2N6454 , 2N6804 , 2N6806 , 2N7091 , 2N7288D , 2N7288R .
History: 2N5909
History: 2N5909
Liste
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