2N6451
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6451
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3.5
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5
V
|Id|ⓘ - Maximum Drain Current: 0.02
A
Package:
TO-72
2N6451
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6451
Datasheet (PDF)
..1. Size:93K interfet
2n6451 2n6452.pdf
Databook.fxp 1/13/99 2:09 PM Page B-2501/99 B-252N6451, 2N6452N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6451 2N6452 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers
9.2. Size:91K interfet
2n6449 2n6450.pdf
Databook.fxp 1/13/99 2:09 PM Page B-24B-24 01/992N6449, 2N6450N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C High Voltage2N6449 2N6450Reverse Gate Source Voltage 300 V 200 VReverse Gate Drain Voltage 300 V 200 VContinuous Forward Gate Current 10 mA 10 mAContinuous Device Power Dissipation 800 mW 800 mWPower Derati
9.3. Size:93K interfet
2n6453 2n6454.pdf
Databook.fxp 1/13/99 2:09 PM Page B-26B-26 01/992N6453, 2N6454N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6453 2N6454 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers
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