J105 Todos los transistores

 ..1. Size:718K  fairchild semi
 j105 j106 j107 jftj105.pdf

J105 JFTJ105 J106 J107 G D G S SOT-223 TO-92 G S NOTE Source & Drain D are interchangeable N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Sour

 ..2. Size:48K  vishay
 j105 j106 j107.pdf

J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 4.5 to 10 3 10 14 J106 2 to 6 6 10 14 J107 0.5 to 4.5 8 10 14 FEATURES BENEFITS APPLICATIONS D Low On-Resistance J105

 0.1. Size:66K  philips
 buj105ab.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE

 0.2. Size:61K  philips
 buj105ax.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

 0.3. Size:81K  philips
 buj105ad.pdf

BUJ105AD Silicon diffused power transistor Rev. 01 14 December 2004 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Moto

 0.4. Size:57K  philips
 buj105a.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER

 0.5. Size:286K  toshiba
 2sj105.pdf

2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current Unit mm and Impedance Converter Applications High breakdown voltage VGDS = 50 V High input impedance I = 1.0 nA (max) (V = 30 V) GSS GS Low R R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK330 S

 0.6. Size:286K  ruichips
 ruh30j105m.pdf

RUH30J105M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Com

 0.7. Size:454K  cn ween semi
 buj105ab.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BUJ105AB Silicon Diffused Power Transistor Product specification October 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighti

 0.8. Size:1613K  cn ween semi
 buj105ad.pdf

BUJ105AD Silicon diffused power transistor Rev. 4 13 July 2018 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballast DC-to-DC conv

 0.9. Size:385K  cn ween semi
 buj105a.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BUJ105A Silicon Diffused Power Transistor Product specification February 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast application