J105 - описание и поиск аналогов

J105 JFTJ105 J106 J107 G D G S SOT-223 TO-92 G S NOTE Source & Drain D are interchangeable N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Sour

J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 4.5 to 10 3 10 14 J106 2 to 6 6 10 14 J107 0.5 to 4.5 8 10 14 FEATURES BENEFITS APPLICATIONS D Low On-Resistance J105

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

BUJ105AD Silicon diffused power transistor Rev. 01 14 December 2004 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Moto

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER

2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current Unit mm and Impedance Converter Applications High breakdown voltage VGDS = 50 V High input impedance I = 1.0 nA (max) (V = 30 V) GSS GS Low R R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK330 S

RUH30J105M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Com

DISCRETE SEMICONDUCTORS DATA SHEET BUJ105AB Silicon Diffused Power Transistor Product specification October 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighti

BUJ105AD Silicon diffused power transistor Rev. 4 13 July 2018 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballast DC-to-DC conv

DISCRETE SEMICONDUCTORS DATA SHEET BUJ105A Silicon Diffused Power Transistor Product specification February 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast application