All MOSFET. J105 Datasheet

 

J105 MOSFET. Datasheet pdf. Equivalent

Type Designator: J105

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.625 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 0.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO-92

J105 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

J105 Datasheet (PDF)

0.1. buj105ad.pdf Size:81K _philips

J105
J105

BUJ105ADSilicon diffused power transistorRev. 01 14 December 2004 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428(D-PAK) surface mounted package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Moto

0.2. buj105ax.pdf Size:61K _philips

J105
J105

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

 0.3. buj105ab.pdf Size:66K _philips

J105
J105

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighting ballast applications, converters, inverters, switchingregulators, motor control systems, etc.QUICK REFERENCE

0.4. buj105a.pdf Size:57K _philips

J105
J105

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER

 0.5. 2sj105.pdf Size:286K _toshiba

J105
J105

2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK330 S

0.6. j105 j106 j107 jftj105.pdf Size:718K _fairchild_semi

J105
J105

J105 JFTJ105J106J107GDGSSOT-223TO-92GSNOTE: Source & DrainD are interchangeableN-Channel SwitchThis device is designed for analog or digital switching applications wherevery low On Resistance is mandatory. Sourced from Process 59.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Sour

0.7. j105 j106 j107.pdf Size:48K _vishay

J105
J105

J105/106/107Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J105 4.5 to 10 3 10 14J106 2 to 6 6 10 14J107 0.5 to 4.5 8 10 14FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J105

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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