J176 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: J176
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 4.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.025 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 250 Ohm
Paquete / Cubierta: TO-92
- Selección de transistores por parámetros
J176 Datasheet (PDF)
j174 j175 j176 j177 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETJ174; J175;J176; J177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationJ174; J175;P-channel silicon field-effect transistorsJ176; J177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in a plastic TO-92envelope and intend
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf

J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units
j174 j175 j176 j177 sst174 sst175 sst176 sst177.pdf

J/SST174/175/176/177 SeriesVishay SiliconixP-Channel JFETsJ174 SST174J175 SST175J176 SST176J177 SST177PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST174 5 to 10 85 10 25J/SST175 3 to 6 125 10 25J/SST176 1 to 4 250 10 25J/SST177 0.8 to 2.25 300 10 25FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J174
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP9970GW-HF | MTN50N06E3 | SM3116NAF | SVF740T | IPI051N15N5 | SSFT4004 | CPC3730
History: AP9970GW-HF | MTN50N06E3 | SM3116NAF | SVF740T | IPI051N15N5 | SSFT4004 | CPC3730



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