J176 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: J176
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.025 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 250 Ohm
Encapsulados: TO-92
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J176 datasheet
j174 j175 j176 j177 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification J174; J175; P-channel silicon field-effect transistors J176; J177 DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intend
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf
J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark 6W / 6X / 6Y NOTE Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units
j174 j175 j176 j177 sst174 sst175 sst176 sst177.pdf
J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 SST174 J175 SST175 J176 SST176 J177 SST177 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 5 to 10 85 10 25 J/SST175 3 to 6 125 10 25 J/SST176 1 to 4 250 10 25 J/SST177 0.8 to 2.25 300 10 25 FEATURES BENEFITS APPLICATIONS D Low On-Resistance J174
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are int
Otros transistores... ISL9N303AS3ST , ISL9N303AS3 , J105 , J106 , J107 , JFTJ105 , J174 , J175 , IRFP064N , J177 , MMBFJ175 , MMBFJ176 , MMBFJ177 , J201 , J202 , MMBFJ201 , MMBFJ202 .
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