Справочник MOSFET. J176

 

J176 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: J176
   Тип транзистора: JFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.025 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 250 Ohm
   Тип корпуса: TO-92

 Аналог (замена) для J176

 

 

J176 Datasheet (PDF)

 ..1. Size:30K  philips
j174 j175 j176 j177 cnv 2.pdf

J176 J176

DISCRETE SEMICONDUCTORSDATA SHEETJ174; J175;J176; J177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationJ174; J175;P-channel silicon field-effect transistorsJ176; J177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in a plastic TO-92envelope and intend

 ..2. Size:728K  fairchild semi
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf

J176 J176

J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units

 ..3. Size:56K  vishay
j174 j175 j176 j177 sst174 sst175 sst176 sst177.pdf

J176 J176

J/SST174/175/176/177 SeriesVishay SiliconixP-Channel JFETsJ174 SST174J175 SST175J176 SST176J177 SST177PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST174 5 to 10 85 10 25J/SST175 3 to 6 125 10 25J/SST176 1 to 4 250 10 25J/SST177 0.8 to 2.25 300 10 25FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J174

 0.1. Size:31K  philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf

J176 J176

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int

 0.2. Size:57K  nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf

J176 J176

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 0.3. Size:202K  central
cmpfj175 cmpfj176.pdf

J176 J176

CMPFJ174CMPFJ175 CMPFJ176www.centralsemi.comCMPFJ177 DESCRIPTION:SURFACE MOUNT SILICONThe CENTRAL SEMICONDUCTOR CMPFJ174 P-CHANNEL JFETSSeries devices are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications.MARKING CODES: CMPFJ174: 6VCMPFJ175: 6WCMPFJ176: 6XCMPFJ177: 6YSOT-23 CASEMAXIMUM RATINGS: (TA=25C)

 0.4. Size:273K  hitachi
2sj176.pdf

J176 J176

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