J176
MOSFET. Datasheet pdf. Equivalent
Type Designator: J176
Type of Transistor: JFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4.5
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 0.025
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 250
Ohm
Package:
TO-92
J176
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J176
Datasheet (PDF)
..1. Size:30K philips
j174 j175 j176 j177 cnv 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETJ174; J175;J176; J177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationJ174; J175;P-channel silicon field-effect transistorsJ176; J177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in a plastic TO-92envelope and intend
..2. Size:728K fairchild semi
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf
J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units
..3. Size:56K vishay
j174 j175 j176 j177 sst174 sst175 sst176 sst177.pdf
J/SST174/175/176/177 SeriesVishay SiliconixP-Channel JFETsJ174 SST174J175 SST175J176 SST176J177 SST177PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST174 5 to 10 85 10 25J/SST175 3 to 6 125 10 25J/SST176 1 to 4 250 10 25J/SST177 0.8 to 2.25 300 10 25FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J174
0.1. Size:31K philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int
0.2. Size:57K nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
0.3. Size:202K central
cmpfj175 cmpfj176.pdf
CMPFJ174CMPFJ175 CMPFJ176www.centralsemi.comCMPFJ177 DESCRIPTION:SURFACE MOUNT SILICONThe CENTRAL SEMICONDUCTOR CMPFJ174 P-CHANNEL JFETSSeries devices are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications.MARKING CODES: CMPFJ174: 6VCMPFJ175: 6WCMPFJ176: 6XCMPFJ177: 6YSOT-23 CASEMAXIMUM RATINGS: (TA=25C)
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