MMBFJ212 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBFJ212
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.225 W
Tensión drenaje-fuente (Vds): 25 V
Tensión compuerta-fuente (Vgs): 6 V
Corriente continua de drenaje (Id): 0.04 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Empaquetado / Estuche: SOT-23
Búsqueda de reemplazo de MOSFET MMBFJ212
MMBFJ212 Datasheet (PDF)
4.1. mmbfj271.pdf 
Size:191K _fairchild_semi
June 2006 MMBFJ271 tm P-Channel Switch Features This device is designed for low level analog switching sample and hold G circuits and chopper stabilized amplifiers. Sourced from process 88. S D SOT-23 Mark : 62T Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Gate C
4.2. j201 j202 mmbfj201 mmbfj202 mmbfj203.pdf Size:783K _fairchild_semi
January 2008 J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52. TO-92 SOT-23 3 2 Marking Marking J201 MMBFJ201 : 62P J202 MMBFJ202 : 62Q 1 1 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximu
4.3. mmbfj270.pdf Size:407K _fairchild_semi
August 2008 MMBFJ270 P-Channel Switch Features This device is designed for low level analog switching sample and hold G circuits and chopper stabilized amplifiers. Sourced from process 88. S D SOT-23 Mark : 61S Absolute Maximum Ratings (Note1) Ta = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Ga
Otros transistores... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
