MMBFJ212
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMBFJ212
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.225
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6
V
|Id|ⓘ - Maximum Drain Current: 0.04
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Package:
SOT-23
MMBFJ212
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMBFJ212
Datasheet (PDF)
8.1. Size:783K fairchild semi
j201 j202 mmbfj201 mmbfj202 mmbfj203.pdf 
January 2008J201 - J202 / MMBFJ201 - MMBFJ203N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.TO-92 SOT-2332MarkingMarking J201MMBFJ201 : 62PJ202MMBFJ202 : 62Q1 11. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute
8.2. Size:407K fairchild semi
mmbfj270.pdf
August 2008MMBFJ270P-Channel SwitchFeatures This device is designed for low level analog switching sample and hold Gcircuits and chopper stabilized amplifiers. Sourced from process 88.SDSOT-23 Mark : 61SAbsolute Maximum Ratings (Note1) Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Fo
8.3. Size:191K fairchild semi
mmbfj271.pdf
June 2006MMBFJ271tmP-Channel SwitchFeatures This device is designed for low level analog switching sample and hold Gcircuits and chopper stabilized amplifiers. Sourced from process 88.SDSOT-23 Mark : 62TAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Forwar
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