J270 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: J270
   Tipo de FET: JFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 2 V
   |Id|ⓘ - Corriente continua de drenaje: 0.015 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
Paquete / Cubierta: TO-92

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J270 Datasheet (PDF)

..1. Size:25K fairchild semi
j270.pdf

J270P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88.TO-9211. Drain 2. Gate 3. SourceAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Forward Gate Current 50 mA

..2. Size:45K vishay
j270 sst270 j271 sst271.pdf

J/SST270 SeriesVishay SiliconixP-Channel JFETsJ270 SST270J271 SST271PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST270 0.5 to 2.0 30 6 2J/SST271 1.5 to 4.5 30 8 6FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J270

..3. Size:24K calogic
j270 j271 sst270 sst271.pdf

P-Channel JFETCORPORATIONJ270 J271 / SST270 SST271FEATURES DESCRIPTION Surface Mount The J270/SST270 Series is an all-purpose amplifier fordesigns requiring P-channel operation. These devices featureAPPLICATIONS high gain, low noise and tight V limits for simple circuitGS(OFF)design. They are available in low-cost SOT-23 and TO-92 P-Channel Amplifierp

0.1. Size:407K fairchild semi
mmbfj270.pdf

August 2008MMBFJ270P-Channel SwitchFeatures This device is designed for low level analog switching sample and hold Gcircuits and chopper stabilized amplifiers. Sourced from process 88.SDSOT-23 Mark : 61SAbsolute Maximum Ratings (Note1) Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Fo

0.2. Size:898K cn hunteck
htj270n03.pdf

HTJ270N03P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level19RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness30RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested6 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT

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