J270 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: J270
Тип транзистора: JFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 2 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.015 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 200 Ohm
Тип корпуса: TO-92
J270 Datasheet (PDF)
j270.pdf
J270P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88.TO-9211. Drain 2. Gate 3. SourceAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Forward Gate Current 50 mA
j270 sst270 j271 sst271.pdf
J/SST270 SeriesVishay SiliconixP-Channel JFETsJ270 SST270J271 SST271PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST270 0.5 to 2.0 30 6 2J/SST271 1.5 to 4.5 30 8 6FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J270
j270 j271 sst270 sst271.pdf
P-Channel JFETCORPORATIONJ270 J271 / SST270 SST271FEATURES DESCRIPTION Surface Mount The J270/SST270 Series is an all-purpose amplifier fordesigns requiring P-channel operation. These devices featureAPPLICATIONS high gain, low noise and tight V limits for simple circuitGS(OFF)design. They are available in low-cost SOT-23 and TO-92 P-Channel Amplifierp
mmbfj270.pdf
August 2008MMBFJ270P-Channel SwitchFeatures This device is designed for low level analog switching sample and hold Gcircuits and chopper stabilized amplifiers. Sourced from process 88.SDSOT-23 Mark : 61SAbsolute Maximum Ratings (Note1) Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage -30 VVGS Gate-Source Voltage 30 VIGF Fo
htj270n03.pdf
HTJ270N03P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level19RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness30RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested6 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
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